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Wilhelm and Else Heraeus-Foundation

Silicon carbide (SiC) is today’s leading third-generation semiconductor, and the first to demonstrate a light emitting diode. Its extraordinary thermo-electric properties made it the dominating semiconductor for high power electronics, such as electric mobility. Since more than ten years, the SiC industry continues growing at an annual rate of 30%, and more than 70% global market share is held by STMicroelectronics and Infineon. This makes silicon carbide one of the very few semiconductors in which Europe is competitive. The continued research on improving “classical” SiC material production and fabrication has propelled the creation of a new valorisation pathway: The emerging field of SiC “quantum” technologies. Especially in the last 5 - 10 years, colour centres in SiC have shown a disruptive potential across all relevant fields in quantum technologies. This seminar brings together the leading experts in SiC quantum and classical technologies, including partners from academia, RTOs, and industry.

Wilhelm and Else Heraeus-Foundation

This seminar discusses advances in the fabrication and optoelectronic properties of quantum-confined solid-state materials from the two viewpoints of bottom-up (e.g. wet-chemistry or molecular beam epitaxy) vs. top-down methods. The overarching hypothesis is that these communities, which currently act largely separately due to the different chemical approaches, face many identical physical challenges in the application of these nanomaterials for optoelectronics, such that an interdisciplinary exchange holds for a high degree of synergy.